Tunneling via surface dislocation in W/β-Ga2O3 Schottky barrier diodes

In this work,W/β-Ga2O3 Schottky barrier diodes,prepared using a confined magnetic field-based sputtering method,were analyzed at different operation temperatures.Firstly,Schottky barrier height increased with increasing temperature from 100 to 300 K and reached 1.03 eV at room temperature.The ideality factor decreased with increasing temperature and it was higher than 2 at 100 K.This apparent high value was related to the tunneling effect.Secondly,the series and on-resistances decreased with increasing operation temperature.Finally,the interfacial dislocation was extracted from the tunneling current.A high dislocation density was found,which indicates the domination of tunneling through dislocation in the transport mecha-nism.These findings are evidently helpful in designing better performance devices.