Comparative study of various methods for extraction of multi- quantum wells Schottky diode parameters

Comparative study of various methods for extraction of multi- quantum wells Schottky diode parameters

In this work, forward current voltage characteristics for multi-quantum wells Al0.33Ga0.67As Schottky diode were measured at temperature ranges from 100 to 300 K. The main parameters of this Schottky diode, such as the ideality factor, barrier height, series resistance and saturation current, have b...

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Veröffentlicht in:Journal of semiconductors 2020-10, Vol.41 (10), p.102401-51
Hauptverfasser: Garoudja, Elyes, Filali, Walid, Oussalah, Slimane, Sengouga, Noureddine, Henini, Mohamed
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Sprache:eng
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barrier height
heuristic methods
multi-quantum wells
parameters extraction
Schottky diode
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container_end_page 51
container_issue 10
container_start_page 102401
container_title Journal of semiconductors
container_volume 41
creator Garoudja, Elyes
Filali, Walid
Oussalah, Slimane
Sengouga, Noureddine
Henini, Mohamed
description In this work, forward current voltage characteristics for multi-quantum wells Al0.33Ga0.67As Schottky diode were measured at temperature ranges from 100 to 300 K. The main parameters of this Schottky diode, such as the ideality factor, barrier height, series resistance and saturation current, have been extracted using both analytical and heuristics methods. Differential evolution (DE), particle swarm optimization (PSO) and artificial bee colony (ABC) have been chosen as candidate heuristics algorithms, while Cheung technic was selected as analytical extraction method. The obtained results show clearly the high performance of DE algorithms in terms of parameters accuracy, convergence speed and robustness.
doi_str_mv 10.1088/1674-4926/41/10/102401
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link; Alma/SFX Local Collection
subjects barrier height
heuristic methods
multi-quantum wells
parameters extraction
Schottky diode
title Comparative study of various methods for extraction of multi- quantum wells Schottky diode parameters
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