Comparative study of various methods for extraction of multi- quantum wells Schottky diode parameters

In this work, forward current voltage characteristics for multi-quantum wells Al0.33Ga0.67As Schottky diode were measured at temperature ranges from 100 to 300 K. The main parameters of this Schottky diode, such as the ideality factor, barrier height, series resistance and saturation current, have b...

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Veröffentlicht in:Journal of semiconductors 2020-10, Vol.41 (10), p.102401-51
Hauptverfasser: Garoudja, Elyes, Filali, Walid, Oussalah, Slimane, Sengouga, Noureddine, Henini, Mohamed
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Sprache:eng
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Zusammenfassung:In this work, forward current voltage characteristics for multi-quantum wells Al0.33Ga0.67As Schottky diode were measured at temperature ranges from 100 to 300 K. The main parameters of this Schottky diode, such as the ideality factor, barrier height, series resistance and saturation current, have been extracted using both analytical and heuristics methods. Differential evolution (DE), particle swarm optimization (PSO) and artificial bee colony (ABC) have been chosen as candidate heuristics algorithms, while Cheung technic was selected as analytical extraction method. The obtained results show clearly the high performance of DE algorithms in terms of parameters accuracy, convergence speed and robustness.
ISSN:1674-4926
2058-6140
DOI:10.1088/1674-4926/41/10/102401