Effect of excess Pb on ferroelectric characteristics of conductive Al-doped ZnO and Sn-doped In2O3 top electrodes in PbLaZrTiOx capacitors

The Pb content effect of chemical solution deposited lanthanum-doped lead zirconate titanate (PLZT) (Pb:La:Zr:Ti = Pb:3:30:70, Pb = 105∼117) was studied for conductive aluminum-doped zinc oxide (AZO) and tin-doped indium oxide (ITO) deposited as top electrodes by means of pulsed laser deposition. The crystallinity, surface morphology, ferroelectric properties and hydrogen degradation resistance of the ITO/PLZT/Pt and AZO/PLZT/Pt capacitors were evaluated. All the PLZT films showed perovskite phase (revealed by X-ray diffraction patterns) and showed similar surface morphology and grain size (revealed by scanning electron microscopy images). PLZT capacitors with a Pb content of 113 exhibited the largest remnant polarization (at 15 V (300 kV cm )), however, the difference in hydrogen degradation resistance was small between the four levels of Pb content.