Form Factors for Rotational Levels in 12C, 16O, 28Si and 40 Ca

We support the proposed ground state rotational bands in C, O, Si and Ca by calculating the form factors for the electro-excitation within a simple model. The model introduces two parameters for the size and the surface thickness of these nuclei and allows for the prediction of the transition probabilities and form factors within the rotator model. The model unambiguously predicts the sequence of rotational levels 0 , 3 , 4 ... for O and Ca, and 0 , 2 , 4 ... for C and Si in agreement with the experiment. The comparison of the calculated form factors with the experimental data shows excellent agreement in the cases Si and Ca and is less satisfactory in the cases C and O.