High Performance Full-Inorganic Flexible Memristor with Combined Resistance-Switching

Flexible memristors hold great promise for flexible electronics applications but are still lacking of good electrical performance together with mechanical flexibility. Herein, we demonstrate a full-inorganic nanoscale flexible memristor by using free-standing ductile alpha-Ag2S films as both a flexible substrate and a functional electrolyte. The device accesses dense multiple-level nonvolatile states with a record high 10 6 ON/OFF ratio. This exceptional memristor performance is induced by sequential processes of Schottky barrier modification at the contact interface and filament formation inside the electrolyte. In addition, it is crucial to ensure that the cathode junction, where Ag+ is reduced to Ag, dominates the total resistance and takes the most of setting bias before the filament formation. Our study provides a comprehensive insight into the resistance-switching mechanism in conductive-bridging memristors and offers a new strategy toward high performance flexible memristors.