Circuit for detecting state of anti-fuse storage unit and memory device thereof

A circuit for detecting a state of an anti-fuse storage unit includes a first current module, a second current module, and a comparator. The first current module has a first end connected to an anti-fuse storage unit array through a first node and a second end connected to a second node. The first c...

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1. Verfasser: CHANGXIN MEMORY TECHNOLOGIES, INC
Format: Patent
Sprache:eng
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Zusammenfassung:A circuit for detecting a state of an anti-fuse storage unit includes a first current module, a second current module, and a comparator. The first current module has a first end connected to an anti-fuse storage unit array through a first node and a second end connected to a second node. The first current module is configured to output a detection current through the second node. The second current module has a first end connected to a first end of a reference resistor through a third node and a second end connected to a fourth node. A second end of the reference resistor is grounded. The second current module is configured to output a reference current through the fourth node. The comparator has a first input end connected to the second node and a second input end connected to the fourth node.