Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
2 A Si-free C-containing film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or Nplasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | 2 A Si-free C-containing film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or Nplasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature. |
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