Method of manufacturing localized semiconductor-on-insulator (SOI) structures in a bulk semiconductor wafer
A method of forming a localized SOI structure in a substrate wherein a trench is formed in the substrate, and a dielectric layer is formed on the base of the trench. The trench is filled with semiconductor material by means of epitaxial growth.
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method of forming a localized SOI structure in a substrate wherein a trench is formed in the substrate, and a dielectric layer is formed on the base of the trench. The trench is filled with semiconductor material by means of epitaxial growth. |
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