Methods for etching the edge of a silicon wafer

Methods for etching the edge of a silicon wafer

The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.

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Bibliographische Detailangaben
Hauptverfasser: Erk, Henry F, Albrecht, Peter D, Hollander, Eugene R, Doane, Thomas E, Schmidt, Judith A, Vandamme, Roland R, Zhang, Guoqiang (David)
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.