Device for the temperature control of the surface temperatures of substrates in a CVD reactor

The invention relates to a CVD reactor having a plurality of rotary tables supported on a rotationally driven susceptor on dynamic gas cushions, wherein each gas cushion is formed by an individually controlled gas flow and each gas flow, dependant on a surface temperature measured by a temperature measuring device, can be varied by an individual actuator. The invention further comprises a carrier, carrying the susceptor and rotating with the susceptor. A common gas supply line ending in the carrier is key to the invention and provides the actuators arranged on the carrier with the gas that forms the gas flow.