Porous valve metal thin film, method for production thereof and thin film capacitor

A porous valve metal thin film, a method for the production thereof, and a thin film capacitor utilizing the thin film as an anode. The porous valve metal thin film has an integral continuous structure that includes the valve metal, an outside surface, and micropores connected to the outside surface...

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Bibliographische Detailangaben
Hauptverfasser: Osako, Toshiyuki, Komukai, Tetsufumi
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A porous valve metal thin film, a method for the production thereof, and a thin film capacitor utilizing the thin film as an anode. The porous valve metal thin film has an integral continuous structure that includes the valve metal, an outside surface, and micropores connected to the outside surface. The thin film has a surface area that is at least double a surface area of the outside surface if the outside surface of the thin film were flat. The valve metal is niobium, tantalum, a niobium alloy or a tantalum alloy and has a particle diameter within a range of 10 nm to 1 μm. The micropores have pore diameters within a range of 10 nm to 1 μm.