Defense system in advanced process control
A method includes performing a lithography process on a wafer to form a patterned photo resist, and measuring the wafer to determine an overlay error of the patterned photo resist. A high/low specification is determined using the overlay error. An overlay process value setting is generated and compa...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method includes performing a lithography process on a wafer to form a patterned photo resist, and measuring the wafer to determine an overlay error of the patterned photo resist. A high/low specification is determined using the overlay error. An overlay process value setting is generated and compared with the high/low specification to determine whether the overlay process value setting is within a range defined by the high/low specification. |
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