Silicon light-emitting element

a b aa 15−3 18−317−3 19−3A silicon light-emitting element includes a first conductivity type silicon substrate having a first surface and a second surface on a side opposite to the first surface , an insulating film provided on the first surface of the silicon substrate , a silicon layer provided on the insulating film , and having a second conductivity type different from the first conductivity type, a first electrode provided on the silicon layer , and a second electrode provided on the second surface of the silicon substrate, and the silicon substrate has a carrier concentration of 5×10cmto 5×10cm, the silicon layer 12 has a carrier concentration of 1×10cmto 5×10cm, and that is larger by one digit or more than the carrier concentration of the silicon substrate , and the insulating film has a film thickness of 0.3 nm to 5 nm. Accordingly, a silicon light-emitting element that is applicable to a silicon photonics light source is realized.