Vacuum treatment method

2A vacuum treatment method and a vacuum treatment apparatus are provided in which the SiH/SiH ratio does not increase even when the deposition rate is increased, thereby deterioration in the film quality is prevented and a high level of productivity can be achieved. A vacuum treatment method comprising the steps of heating a substrate disposed inside a deposition chamber under a reduced pressure atmosphere using a heat spreader (a heating device), and supplying electric power to a discharge electrode disposed in a position facing the substrate, thereby conducting a deposition on the substrate, wherein the deposition is conducted in a state where the temperature difference between the substrate and the discharge electrode is not more than 30° C. The deposition may also be conducted with the gap between the substrate and the discharge electrode set to not more than 7.5 mm.