Phase-change memory and fabrication method thereof

A phase-change memory is provided. The phase-change memory comprises a substrate. A first electrode is formed on the substrate. A circular or linear phase-change layer is electrically connected to the first electrode. A second electrode formed on the phase-change layer and electrically connected to...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Chuo, Yen, Hsu, Hong-Hui
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A phase-change memory is provided. The phase-change memory comprises a substrate. A first electrode is formed on the substrate. A circular or linear phase-change layer is electrically connected to the first electrode. A second electrode formed on the phase-change layer and electrically connected to the phase-change layer, wherein at least one of the first electrode and the second electrode comprises phase-change material.