FinFET with two independent gates and method for fabricating the same

A FinFET comprises a fin-shaped layer-section of a single-crystalline active semiconductor layer extending on an insulating substrate layer along a longitudinal fin direction between, a source layer-section, and a drain layer-section of the single-crystalline active semiconductor layer. Furthermore, two separate gate-electrode layers are provided, which do not form sections of the single-crystalline active semiconductor layer, each of the gate-electrode layers facing one of the opposite side faces of the fin-shaped layer-section. Each gate-electrode layer is connected with a respective separate gate contact. The gate-electrode layers, as seen in a cross-sectional view of a plane that is perpendicular to the longitudinal fin-direction, are arranged on the substrate layer between the respective side face of the fin-shaped layer section and a respective contact-post layer section of the single-crystalline semiconductor layer.