Image sensor and method for manufacturing the same

A backside illumination (BSI) image sensor having a light receiving part at the wafer or die backside, and a manufacturing method thereof, are disclosed. The method includes polishing the light receiving part so that a super via protrudes, forming a first insulating layer to cover the protruding super via and the light receiving part, forming a photoresist pattern on the first insulating layer to expose a pad region, etching the first insulating layer to form spacers at sides of the protruding super via, repeatedly forming a second insulating layer covering the spacers, the super via and the light receiving part and etching the second insulating layer so that the spacers increase in width and cover an upper surface of the light receiving part, and forming a metal pad in the pad region to contact the super via.