Interior antenna for substrate processing chamber
1 21 2An antenna for coupling RF energy to a plasma in a process chamber having a wall comprises a coil having a face exposed to the plasma in the chamber. A plurality of standoffs support the coil at a set spacing from the wall of the process chamber, at least one standoff comprising a terminal tho...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | 1 21 2An antenna for coupling RF energy to a plasma in a process chamber having a wall comprises a coil having a face exposed to the plasma in the chamber. A plurality of standoffs support the coil at a set spacing from the wall of the process chamber, at least one standoff comprising a terminal thorough which electrical power is applied to the coil from an external power source. The terminal comprises a conductor receptacle having a first length Land a jacket around the conductor receptacle, the jacket having a second length L. The length Lis larger than the length L. A conductor cup is provided about the standoff having the terminal. |
---|