Stacked trench metal-oxide-semiconductor field effect transistor device

Stacked trench metal-oxide-semiconductor field effect transistor device

Embodiments of the present invention are directed toward a trench metal-oxide-semiconductor field effect transistor (TMOSFET) device. The TMOSFET device includes a source-side-gate TMOSFET coupled to a drain-side-gate TMOSFET . A switching node metal layer couples the drain of the source-side-gate T...

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Hauptverfasser: Pattanayak, Deva, Qi, Jason (Jianhai), Bai, Yuming, Lui, Kam-Hong, Wong, Ronald
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Embodiments of the present invention are directed toward a trench metal-oxide-semiconductor field effect transistor (TMOSFET) device. The TMOSFET device includes a source-side-gate TMOSFET coupled to a drain-side-gate TMOSFET . A switching node metal layer couples the drain of the source-side-gate TMOSFET to the source of the drain-side-gate TMOSFET so that the TMOSFETs are packaged as a stacked or lateral device.