Method and apparatus for reducing read disturb in memory

Method and apparatus for reducing read disturb in memory

Various aspects of a NAND memory include have multiple versions of a high threshold voltage distribution-a version with a reduced maximum, and another version. The version with a reduced maximum has a reduced word line pass voltage.

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Bibliographische Detailangaben
Hauptverfasser: Hung, Chun-Hsiung, Hung, Shuo-Nan, Liu, Tseng-Yi
Format: Patent
Sprache:eng
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Zusammenfassung:Various aspects of a NAND memory include have multiple versions of a high threshold voltage distribution-a version with a reduced maximum, and another version. The version with a reduced maximum has a reduced word line pass voltage.