One hundred millimeter single crystal silicon carbide wafer

A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiat...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Jenny, Jason Ronald, Malta, David Phillip, Hobgood, Hudson McDonald, Mueller, Stephan Georg, Brady, Mark, Leonard, Robert Tyler, Powell, Adrian, Tsvetkov, Valeri F
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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