One hundred millimeter single crystal silicon carbide wafer

A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiat...

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Bibliographische Detailangaben
Hauptverfasser: Jenny, Jason Ronald, Malta, David Phillip, Hobgood, Hudson McDonald, Mueller, Stephan Georg, Brady, Mark, Leonard, Robert Tyler, Powell, Adrian, Tsvetkov, Valeri F
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.