One hundred millimeter single crystal silicon carbide wafer

One hundred millimeter single crystal silicon carbide wafer

A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiat...

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Hauptverfasser: Jenny, Jason Ronald, Malta, David Phillip, Hobgood, Hudson McDonald, Mueller, Stephan Georg, Brady, Mark, Leonard, Robert Tyler, Powell, Adrian, Tsvetkov, Valeri F
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Sprache:eng
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creator Jenny, Jason Ronald
Malta, David Phillip
Hobgood, Hudson McDonald
Mueller, Stephan Georg
Brady, Mark
Leonard, Robert Tyler
Powell, Adrian
Tsvetkov, Valeri F
description A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.
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title One hundred millimeter single crystal silicon carbide wafer
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