Bipolar transistor

A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.

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Bibliographische Detailangaben
Hauptverfasser:	Lane, William Allan, Bain, Andrew David, Bowers, Derek Frederick, Daly, Paul Malachy, Deignan, Anne Maria, Dunbar, Michael Thomas, McGuiness, Patrick Martin, Stenson, Bernard Patrick
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.