Removal of surface oxides by electron attachment for wafer bumping applications

The present invention relates to a method for removing metal oxides from a substrate surface. In one particular embodiment, the method comprises: providing a substrate, a first, and a second electrode that reside within a target area; passing a gas mixture comprising a reducing gas through the targe...

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Hauptverfasser: Dong, Chun Christine, McDermott, Wayne Thomas, Schwarz, Alexander, Arslanian, Gregory Khosrov, Patrick, Richard E
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creator Dong, Chun Christine
McDermott, Wayne Thomas
Schwarz, Alexander
Arslanian, Gregory Khosrov
Patrick, Richard E
description The present invention relates to a method for removing metal oxides from a substrate surface. In one particular embodiment, the method comprises: providing a substrate, a first, and a second electrode that reside within a target area; passing a gas mixture comprising a reducing gas through the target area; supplying an amount of energy to the first and/or the second electrode to generate electrons within the target area wherein at least a portion of the electrons attach to a portion of the reducing gas and form a negatively charged reducing gas; and contacting the substrate with the negatively charged reducing gas to reduce the metal oxides on the surface of the substrate.
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fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_08119016</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>08119016</sourcerecordid><originalsourceid>FETCH-uspatents_grants_081190163</originalsourceid><addsrcrecordid>eNqNyz0KAjEQQOE0FqLeYS4gbBBEa1mxE8ReZuNkDSSZkJn4c3sVPIDV17w3NccTJb5jBPYgrXp0BPwMVxIYXkCRnFbOgKrobomygucKD_RUYWiphDwClhKDQw2cZW4mHqPQ4ufMwL4_7w7LJgX188tlrPil21i77ex69UfyBjdEOC0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Removal of surface oxides by electron attachment for wafer bumping applications</title><source>USPTO Issued Patents</source><creator>Dong, Chun Christine ; McDermott, Wayne Thomas ; Schwarz, Alexander ; Arslanian, Gregory Khosrov ; Patrick, Richard E</creator><creatorcontrib>Dong, Chun Christine ; McDermott, Wayne Thomas ; Schwarz, Alexander ; Arslanian, Gregory Khosrov ; Patrick, Richard E ; Air Products and Chemicals, Inc</creatorcontrib><description>The present invention relates to a method for removing metal oxides from a substrate surface. In one particular embodiment, the method comprises: providing a substrate, a first, and a second electrode that reside within a target area; passing a gas mixture comprising a reducing gas through the target area; supplying an amount of energy to the first and/or the second electrode to generate electrons within the target area wherein at least a portion of the electrons attach to a portion of the reducing gas and form a negatively charged reducing gas; and contacting the substrate with the negatively charged reducing gas to reduce the metal oxides on the surface of the substrate.</description><language>eng</language><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8119016$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64037</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8119016$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Dong, Chun Christine</creatorcontrib><creatorcontrib>McDermott, Wayne Thomas</creatorcontrib><creatorcontrib>Schwarz, Alexander</creatorcontrib><creatorcontrib>Arslanian, Gregory Khosrov</creatorcontrib><creatorcontrib>Patrick, Richard E</creatorcontrib><creatorcontrib>Air Products and Chemicals, Inc</creatorcontrib><title>Removal of surface oxides by electron attachment for wafer bumping applications</title><description>The present invention relates to a method for removing metal oxides from a substrate surface. In one particular embodiment, the method comprises: providing a substrate, a first, and a second electrode that reside within a target area; passing a gas mixture comprising a reducing gas through the target area; supplying an amount of energy to the first and/or the second electrode to generate electrons within the target area wherein at least a portion of the electrons attach to a portion of the reducing gas and form a negatively charged reducing gas; and contacting the substrate with the negatively charged reducing gas to reduce the metal oxides on the surface of the substrate.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNqNyz0KAjEQQOE0FqLeYS4gbBBEa1mxE8ReZuNkDSSZkJn4c3sVPIDV17w3NccTJb5jBPYgrXp0BPwMVxIYXkCRnFbOgKrobomygucKD_RUYWiphDwClhKDQw2cZW4mHqPQ4ufMwL4_7w7LJgX188tlrPil21i77ex69UfyBjdEOC0</recordid><startdate>20120221</startdate><enddate>20120221</enddate><creator>Dong, Chun Christine</creator><creator>McDermott, Wayne Thomas</creator><creator>Schwarz, Alexander</creator><creator>Arslanian, Gregory Khosrov</creator><creator>Patrick, Richard E</creator><scope>EFH</scope></search><sort><creationdate>20120221</creationdate><title>Removal of surface oxides by electron attachment for wafer bumping applications</title><author>Dong, Chun Christine ; McDermott, Wayne Thomas ; Schwarz, Alexander ; Arslanian, Gregory Khosrov ; Patrick, Richard E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_081190163</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Dong, Chun Christine</creatorcontrib><creatorcontrib>McDermott, Wayne Thomas</creatorcontrib><creatorcontrib>Schwarz, Alexander</creatorcontrib><creatorcontrib>Arslanian, Gregory Khosrov</creatorcontrib><creatorcontrib>Patrick, Richard E</creatorcontrib><creatorcontrib>Air Products and Chemicals, Inc</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Dong, Chun Christine</au><au>McDermott, Wayne Thomas</au><au>Schwarz, Alexander</au><au>Arslanian, Gregory Khosrov</au><au>Patrick, Richard E</au><aucorp>Air Products and Chemicals, Inc</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Removal of surface oxides by electron attachment for wafer bumping applications</title><date>2012-02-21</date><risdate>2012</risdate><abstract>The present invention relates to a method for removing metal oxides from a substrate surface. In one particular embodiment, the method comprises: providing a substrate, a first, and a second electrode that reside within a target area; passing a gas mixture comprising a reducing gas through the target area; supplying an amount of energy to the first and/or the second electrode to generate electrons within the target area wherein at least a portion of the electrons attach to a portion of the reducing gas and form a negatively charged reducing gas; and contacting the substrate with the negatively charged reducing gas to reduce the metal oxides on the surface of the substrate.</abstract><oa>free_for_read</oa></addata></record>
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title Removal of surface oxides by electron attachment for wafer bumping applications
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T15%3A54%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Dong,%20Chun%20Christine&rft.aucorp=Air%20Products%20and%20Chemicals,%20Inc&rft.date=2012-02-21&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E08119016%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true