Removal of surface oxides by electron attachment for wafer bumping applications

The present invention relates to a method for removing metal oxides from a substrate surface. In one particular embodiment, the method comprises: providing a substrate, a first, and a second electrode that reside within a target area; passing a gas mixture comprising a reducing gas through the targe...

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Bibliographische Detailangaben
Hauptverfasser: Dong, Chun Christine, McDermott, Wayne Thomas, Schwarz, Alexander, Arslanian, Gregory Khosrov, Patrick, Richard E
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present invention relates to a method for removing metal oxides from a substrate surface. In one particular embodiment, the method comprises: providing a substrate, a first, and a second electrode that reside within a target area; passing a gas mixture comprising a reducing gas through the target area; supplying an amount of energy to the first and/or the second electrode to generate electrons within the target area wherein at least a portion of the electrons attach to a portion of the reducing gas and form a negatively charged reducing gas; and contacting the substrate with the negatively charged reducing gas to reduce the metal oxides on the surface of the substrate.