Surface treatment method of group III nitride semiconductor and manufacturing method of the group III nitride semiconductor

Surface treatment method of group III nitride semiconductor and manufacturing method of the group III nitride semiconductor

There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam...

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Bibliographische Detailangaben
Hauptverfasser: Yang, Jong In, Lee, Sang Bum, Song, Sang Yeob, Lee, Si Hyuk, Kim, Tae Hyung
Format: Patent
Sprache:eng
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Zusammenfassung:There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.