Chemical oxide removal of plasma damaged SiCOH low k dielectrics
A structure and method for removing damages of a dual damascene structure after plasma etching. The method includes the use of sublimation processes to deposit reactive material onto the damaged regions and conditions to achieve a controlled removal of the damaged region. Furthermore a semiconductor...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A structure and method for removing damages of a dual damascene structure after plasma etching. The method includes the use of sublimation processes to deposit reactive material onto the damaged regions and conditions to achieve a controlled removal of the damaged region. Furthermore a semiconductor structure includes a dual damascene structure that has been treated by the method. |
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