High velocity method for depositing diamond films from a gaseous phase in SHF discharge plasma and a plasma reactor for carrying out said method

−5 The invention relates to carbon deposition by decomposing gaseous compounds with the aid of the SHF discharge plasma. Said invention ensures a high speed deposition of the high quality diamond films (having a loss-tangent angle δ equal to or less than 3×10on supports whose diameter is equal to or higher than 100 mm. For this purpose, a SHF discharge is initiated in a gas mixture which is arranged in a reaction chamber having a frequency f which is many times higher than a commonly used frequency of 2.45 GHz, for example 30 GHz. In order to localize the plasma, a standing wave is formed near the carrier and plasma layers are formed in the antinodes thereof in such a way that the sizes thereof are adjustable.