Method of enhancing on-chip inductance structure utilizing silicon through via technology

A method is provided that utilizes silicon through via technology, to build a Toroid into the chip with the addition of a layer of magnetic material such as Nickel above and below the T-coil stacked multi-ring structure. This allows the connection between the inner via and an array of outer vias. Th...

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Bibliographische Detailangaben
Hauptverfasser: Maki, Andrew Benson, Bartley, Gerald Keith, Germann, Philip Raymond, Maxson, Mark Owen, Becker, Darryl John, Dahlen, Paul Eric, Sheets, II, John Edward
Format: Patent
Sprache:eng
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Zusammenfassung:A method is provided that utilizes silicon through via technology, to build a Toroid into the chip with the addition of a layer of magnetic material such as Nickel above and below the T-coil stacked multi-ring structure. This allows the connection between the inner via and an array of outer vias. This material is added on a BEOL metal layer or as an external coating on the finished silicon. Depending on the configuration and material used for the via, the inductance will increase approximately two orders of magnitude (e.g., by utilizing a nickel via core). Moreover, a ferrite material with proper thermal conduction properties is used in one embodiment.