Method of correcting a mask pattern and method of manufacturing a semiconductor device
The method of manufacturing a semiconductor device has deciding an amount of a correction of a mask pattern for a size of an active region of a semiconductor substrate, correcting the mask pattern on the basis of the decided amount of the correction, and exposing a resist film by using an exposure m...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The method of manufacturing a semiconductor device has deciding an amount of a correction of a mask pattern for a size of an active region of a semiconductor substrate, correcting the mask pattern on the basis of the decided amount of the correction, and exposing a resist film by using an exposure mask having the corrected mask pattern. |
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