Method for producing silicon carbide single crystal
A method for producing a silicon carbide single crystal, which comprises bringing a silicon carbide single crystal substrate into contact with a melt prepared by melting a raw material containing Si and C, and growing a silicon carbide single crystal on the substrate, the method including performing...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method for producing a silicon carbide single crystal, which comprises bringing a silicon carbide single crystal substrate into contact with a melt prepared by melting a raw material containing Si and C, and growing a silicon carbide single crystal on the substrate, the method including performing a cycle comprising the following steps (a) and (b): |
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