Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same

A method of producing silicon nanowires includes providing a substrate in the form of a doped material; formulating an etching solution; and applying an appropriate current density for an appropriate length of time. Related structures and devices composed at least in part from silicon nanowires are...

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1. Verfasser: Wu, Yongxian
Format: Patent
Sprache:eng
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Zusammenfassung:A method of producing silicon nanowires includes providing a substrate in the form of a doped material; formulating an etching solution; and applying an appropriate current density for an appropriate length of time. Related structures and devices composed at least in part from silicon nanowires are also described.