Method of forming low capacitance ESD device and structure therefor

Method of forming low capacitance ESD device and structure therefor

In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.

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Bibliographische Detailangaben
Hauptverfasser: Keena, Thomas, Chang, Ki, Robb, Francine Y, Liu, Mingjiao, Salih, Ali, Parsey, Jr, John Michael, Chang, George
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.