Gate profile control through effective frequency of dual HF/VHF sources in a plasma etch process

Gate profile control through effective frequency of dual HF/VHF sources in a plasma etch process

A method of processing a wafer in a plasma, in which target values of two different plasma process parameters are simultaneously realized under predetermined process conditions by setting respective power levels of VHF and HF power simultaneously coupled to the wafer to respective optimum levels.

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Bibliographische Detailangaben
Hauptverfasser: Hammond, IV, Edward P, Belen, Rodolfo P, Paterson, Alexander M, Hatcher, Brian K, Todorow, Valentin N, Katz, Dan
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
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Beschreibung
Zusammenfassung:A method of processing a wafer in a plasma, in which target values of two different plasma process parameters are simultaneously realized under predetermined process conditions by setting respective power levels of VHF and HF power simultaneously coupled to the wafer to respective optimum levels.