Integrated circuit with a contact structure including a portion arranged in a cavity of a semiconductor structure

An integrated circuit includes a contact structure with a buried first and a protruding second portion. The buried first portion is arranged in a cavity formed in a semiconductor structure and is in direct contact with the semiconductor structure. The protruding second portion is arranged above the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Graf, Werner, Fitz, Clemens
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:An integrated circuit includes a contact structure with a buried first and a protruding second portion. The buried first portion is arranged in a cavity formed in a semiconductor structure and is in direct contact with the semiconductor structure. The protruding second portion is arranged above the main surface of the semiconductor structure and in direct contact with a conductive structure that is spaced apart from or separated from the main surface of the semiconductor structure. An insulator structure is arranged below and in direct contact with the contact structure.