Semiconductor probe having wedge shape resistive tip and method of fabricating the same

A semiconductor probe having a wedge shape resistive tip and a method of fabricating the semiconductor probe is provided. The semiconductor probe includes a resistive tip that is doped with a first impurity, has a resistance region doped with a low concentration of a second impurity having an opposi...

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Bibliographische Detailangaben
Hauptverfasser: Ko, Hyoung-soo, Jung, Ju-hwan, Hong, Seung-bum, Park, Hong-sik, Park, Chul-min
Format: Patent
Sprache:eng
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Zusammenfassung:A semiconductor probe having a wedge shape resistive tip and a method of fabricating the semiconductor probe is provided. The semiconductor probe includes a resistive tip that is doped with a first impurity, has a resistance region doped with a low concentration of a second impurity having an opposite polarity to the first impurity, and has first and second semiconductor electrode regions doped with a high concentration of the second impurity on both side slopes of the resistive tip. The probe also includes a cantilever having the resistive tip on an edge portion thereof, and an end portion of the resistive tip has a wedge shape.