Operating and controlling insulated gate bipolar transistors in high speed failure mode situations
A circuit and method to provide dynamic fault protection to transistors are disclosed. The fault protection may be particularly suited for protecting insulated gate bipolar transistors (IGBTs).
Gespeichert in:
Hauptverfasser: | , , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Huang, Fengtai Ludwig, Bryan Flett, Fred Vadula, Subramanian S Zhu, Lizhi Hampo, Richard J |
description | A circuit and method to provide dynamic fault protection to transistors are disclosed. The fault protection may be particularly suited for protecting insulated gate bipolar transistors (IGBTs). |
format | Patent |
fullrecord | <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_07983013</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>07983013</sourcerecordid><originalsourceid>FETCH-uspatents_grants_079830133</originalsourceid><addsrcrecordid>eNqNjDEKAjEQRdNYiHqHuYCwkkKtRbGzsZdZk80OZCchM7m_I3gAm__48HhrNz5qbKjECZADvAtrKzl_P7H0jBoDJFsYqZaMDbQhC4mWJqbATGkGqdG0CSn3FmEpIYKQdusWlq1bTZgl7n7cOLhdn5f7vku1MKu8kjUNw_F88sPB-z-UD2yQP8M</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Operating and controlling insulated gate bipolar transistors in high speed failure mode situations</title><source>USPTO Issued Patents</source><creator>Huang, Fengtai ; Ludwig, Bryan ; Flett, Fred ; Vadula, Subramanian S ; Zhu, Lizhi ; Hampo, Richard J</creator><creatorcontrib>Huang, Fengtai ; Ludwig, Bryan ; Flett, Fred ; Vadula, Subramanian S ; Zhu, Lizhi ; Hampo, Richard J ; Continantal Automotive Systems US, Inc</creatorcontrib><description>A circuit and method to provide dynamic fault protection to transistors are disclosed. The fault protection may be particularly suited for protecting insulated gate bipolar transistors (IGBTs).</description><language>eng</language><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7983013$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64039</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7983013$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Huang, Fengtai</creatorcontrib><creatorcontrib>Ludwig, Bryan</creatorcontrib><creatorcontrib>Flett, Fred</creatorcontrib><creatorcontrib>Vadula, Subramanian S</creatorcontrib><creatorcontrib>Zhu, Lizhi</creatorcontrib><creatorcontrib>Hampo, Richard J</creatorcontrib><creatorcontrib>Continantal Automotive Systems US, Inc</creatorcontrib><title>Operating and controlling insulated gate bipolar transistors in high speed failure mode situations</title><description>A circuit and method to provide dynamic fault protection to transistors are disclosed. The fault protection may be particularly suited for protecting insulated gate bipolar transistors (IGBTs).</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNqNjDEKAjEQRdNYiHqHuYCwkkKtRbGzsZdZk80OZCchM7m_I3gAm__48HhrNz5qbKjECZADvAtrKzl_P7H0jBoDJFsYqZaMDbQhC4mWJqbATGkGqdG0CSn3FmEpIYKQdusWlq1bTZgl7n7cOLhdn5f7vku1MKu8kjUNw_F88sPB-z-UD2yQP8M</recordid><startdate>20110719</startdate><enddate>20110719</enddate><creator>Huang, Fengtai</creator><creator>Ludwig, Bryan</creator><creator>Flett, Fred</creator><creator>Vadula, Subramanian S</creator><creator>Zhu, Lizhi</creator><creator>Hampo, Richard J</creator><scope>EFH</scope></search><sort><creationdate>20110719</creationdate><title>Operating and controlling insulated gate bipolar transistors in high speed failure mode situations</title><author>Huang, Fengtai ; Ludwig, Bryan ; Flett, Fred ; Vadula, Subramanian S ; Zhu, Lizhi ; Hampo, Richard J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_079830133</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Huang, Fengtai</creatorcontrib><creatorcontrib>Ludwig, Bryan</creatorcontrib><creatorcontrib>Flett, Fred</creatorcontrib><creatorcontrib>Vadula, Subramanian S</creatorcontrib><creatorcontrib>Zhu, Lizhi</creatorcontrib><creatorcontrib>Hampo, Richard J</creatorcontrib><creatorcontrib>Continantal Automotive Systems US, Inc</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Huang, Fengtai</au><au>Ludwig, Bryan</au><au>Flett, Fred</au><au>Vadula, Subramanian S</au><au>Zhu, Lizhi</au><au>Hampo, Richard J</au><aucorp>Continantal Automotive Systems US, Inc</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Operating and controlling insulated gate bipolar transistors in high speed failure mode situations</title><date>2011-07-19</date><risdate>2011</risdate><abstract>A circuit and method to provide dynamic fault protection to transistors are disclosed. The fault protection may be particularly suited for protecting insulated gate bipolar transistors (IGBTs).</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_uspatents_grants_07983013 |
source | USPTO Issued Patents |
title | Operating and controlling insulated gate bipolar transistors in high speed failure mode situations |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T08%3A40%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Huang,%20Fengtai&rft.aucorp=Continantal%20Automotive%20Systems%20US,%20Inc&rft.date=2011-07-19&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E07983013%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |