Operating and controlling insulated gate bipolar transistors in high speed failure mode situations

Operating and controlling insulated gate bipolar transistors in high speed failure mode situations

A circuit and method to provide dynamic fault protection to transistors are disclosed. The fault protection may be particularly suited for protecting insulated gate bipolar transistors (IGBTs).

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Bibliographische Detailangaben
Hauptverfasser: Huang, Fengtai, Ludwig, Bryan, Flett, Fred, Vadula, Subramanian S, Zhu, Lizhi, Hampo, Richard J
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
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Beschreibung
Zusammenfassung:A circuit and method to provide dynamic fault protection to transistors are disclosed. The fault protection may be particularly suited for protecting insulated gate bipolar transistors (IGBTs).