Semiconductor device
A semiconductor device that includes a metal fuse which may be used for redundancy or trimming, allowing for adjustment in the characteristics of a circuit. The fuse includes a disconnecting metal, a plurality of metal-vias that are connected under respective ends of the disconnecting metal, and a p...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Ohtsuka, Masaya |
description | A semiconductor device that includes a metal fuse which may be used for redundancy or trimming, allowing for adjustment in the characteristics of a circuit. The fuse includes a disconnecting metal, a plurality of metal-vias that are connected under respective ends of the disconnecting metal, and a plurality of interconnections that connect to the disconnecting metal through respective metal-vias. The disconnecting metal is disconnected by a laser exposure and the metal-vias are located inside of the spot diameter of the laser used for the laser exposure, and are spaced apart from a side surface of the disconnecting metal. The disconnecting metal is formed of a material having a melting point and a boiling point that is lower than the melting point and boiling point of the metal-vias. |
format | Patent |
fullrecord | <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_07977764</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>07977764</sourcerecordid><originalsourceid>FETCH-uspatents_grants_079777643</originalsourceid><addsrcrecordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AwKbq4hzh66pcUFiSWpeSXF8elFiSDKwNzS3NzczMSYCCUATQMh9g</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device</title><source>USPTO Issued Patents</source><creator>Ohtsuka, Masaya</creator><creatorcontrib>Ohtsuka, Masaya ; Ricoh Company, Ltd</creatorcontrib><description>A semiconductor device that includes a metal fuse which may be used for redundancy or trimming, allowing for adjustment in the characteristics of a circuit. The fuse includes a disconnecting metal, a plurality of metal-vias that are connected under respective ends of the disconnecting metal, and a plurality of interconnections that connect to the disconnecting metal through respective metal-vias. The disconnecting metal is disconnected by a laser exposure and the metal-vias are located inside of the spot diameter of the laser used for the laser exposure, and are spaced apart from a side surface of the disconnecting metal. The disconnecting metal is formed of a material having a melting point and a boiling point that is lower than the melting point and boiling point of the metal-vias.</description><language>eng</language><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7977764$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64037</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7977764$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Ohtsuka, Masaya</creatorcontrib><creatorcontrib>Ricoh Company, Ltd</creatorcontrib><title>Semiconductor device</title><description>A semiconductor device that includes a metal fuse which may be used for redundancy or trimming, allowing for adjustment in the characteristics of a circuit. The fuse includes a disconnecting metal, a plurality of metal-vias that are connected under respective ends of the disconnecting metal, and a plurality of interconnections that connect to the disconnecting metal through respective metal-vias. The disconnecting metal is disconnected by a laser exposure and the metal-vias are located inside of the spot diameter of the laser used for the laser exposure, and are spaced apart from a side surface of the disconnecting metal. The disconnecting metal is formed of a material having a melting point and a boiling point that is lower than the melting point and boiling point of the metal-vias.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AwKbq4hzh66pcUFiSWpeSXF8elFiSDKwNzS3NzczMSYCCUATQMh9g</recordid><startdate>20110712</startdate><enddate>20110712</enddate><creator>Ohtsuka, Masaya</creator><scope>EFH</scope></search><sort><creationdate>20110712</creationdate><title>Semiconductor device</title><author>Ohtsuka, Masaya</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_079777643</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Ohtsuka, Masaya</creatorcontrib><creatorcontrib>Ricoh Company, Ltd</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ohtsuka, Masaya</au><aucorp>Ricoh Company, Ltd</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device</title><date>2011-07-12</date><risdate>2011</risdate><abstract>A semiconductor device that includes a metal fuse which may be used for redundancy or trimming, allowing for adjustment in the characteristics of a circuit. The fuse includes a disconnecting metal, a plurality of metal-vias that are connected under respective ends of the disconnecting metal, and a plurality of interconnections that connect to the disconnecting metal through respective metal-vias. The disconnecting metal is disconnected by a laser exposure and the metal-vias are located inside of the spot diameter of the laser used for the laser exposure, and are spaced apart from a side surface of the disconnecting metal. The disconnecting metal is formed of a material having a melting point and a boiling point that is lower than the melting point and boiling point of the metal-vias.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_uspatents_grants_07977764 |
source | USPTO Issued Patents |
title | Semiconductor device |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T16%3A46%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Ohtsuka,%20Masaya&rft.aucorp=Ricoh%20Company,%20Ltd&rft.date=2011-07-12&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E07977764%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |