Plasma reactor for processing a workpiece and having a tunable cathode
A plasma reactor is provided for processing a workpiece such as a transparent mask or a semiconductor wafer. The reactor includes a vacuum chamber having a ceiling and a sidewall. A workpiece support pedestal within the chamber includes a metal cathode having a support surface facing the ceiling and...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A plasma reactor is provided for processing a workpiece such as a transparent mask or a semiconductor wafer. The reactor includes a vacuum chamber having a ceiling and a sidewall. A workpiece support pedestal within the chamber includes a metal cathode having a support surface facing the ceiling and defining a support plane for supporting a workpiece. The cathode has a hollow space formed within its interior. The reactor further includes a movable metal element within the hollow space and a mechanism for controlling a distance between the metal element and the support plane. |
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