Recovery while programming non-volatile memory (NVM)

Recovery while programming non-volatile memory (NVM)

Disclosed are methods and circuits for performing recovery associated with programming of non-volatile memory (NVM) array cells. According to embodiments, there are provided methods and circuits for programming NVM cells, including: (1) erasing NVM array cells; (2) loading an SRAM with user data; (3...

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Bibliographische Detailangaben
Hauptverfasser: Cohen, Itzic, Tirosh, Ori, Danon, Kobi, Hadas, Shmulik
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Disclosed are methods and circuits for performing recovery associated with programming of non-volatile memory (NVM) array cells. According to embodiments, there are provided methods and circuits for programming NVM cells, including: (1) erasing NVM array cells; (2) loading an SRAM with user data; (3) if programming is successful, then flipping bits in the SRAM; and (4) if programming is not successful, reading data back from the array to the SRAM.