Diode with asymmetric silicon germanium anode
The present invention is directed to a diode with an asymmetric silicon germanium anode and methods of making same. In one illustrative embodiment, the diode includes an anode comprising a P-doped silicon germanium material formed in a semiconducting substrate, an N-doped silicon cathode formed in t...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present invention is directed to a diode with an asymmetric silicon germanium anode and methods of making same. In one illustrative embodiment, the diode includes an anode comprising a P-doped silicon germanium material formed in a semiconducting substrate, an N-doped silicon cathode formed in the semiconducting substrate, a first conductive contact that is conductively coupled to the anode and a second conductive contact that is conductively coupled to the cathode. |
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