Bias circuit for a MOS device

A method and circuit for providing a bias voltage to a MOS device is disclosed. The method and circuit comprise utilizing at least one diode connected circuit to provide a voltage that tracks process, voltage and temperature variations of a semiconductor device. The method and circuit includes utili...

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Bibliographische Detailangaben
Hauptverfasser: Clements, Steven Mark, Cranford, Jr, Hayden C, Dwarka, Amar Chandra Mahadeo, Ewen, John Farley
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method and circuit for providing a bias voltage to a MOS device is disclosed. The method and circuit comprise utilizing at least one diode connected circuit to provide a voltage that tracks process, voltage and temperature variations of a semiconductor device. The method and circuit includes utilizing a current mirror circuit coupled to the at least one diode connected circuit to generate a bias voltage for the body of the semiconductor device from the voltage. The bias voltage allows for compensation for the process, voltage and temperature variations.