Semiconductor structure including mixed rare earth oxide formed on silicon

A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.

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Bibliographische Detailangaben
Hauptverfasser: Bojarczuk, Jr, Nestor Alexander, Buchanan, Douglas Andrew, Guha, Supratik, Narayanan, Vijay, Ragnarsson, Lars-Ake
Format: Patent
Sprache:eng
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Zusammenfassung:A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.