Phase change memory element with a peripheral connection to a thin film electrode

A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of the first electrode contacts the phase change element thereby reducin...

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Bibliographische Detailangaben

Hauptverfasser:	Arnold, John Christopher, Clevenger, Lawrence Alfred, Dalton, Timothy Joseph, Gaidis, Michael Christopher, Hsu, Louis L, Radens, Carl John, Wong, Keith Kwong Hon, Yang, Chih-Chao
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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