Phase change memory element with a peripheral connection to a thin film electrode

Phase change memory element with a peripheral connection to a thin film electrode

A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of the first electrode contacts the phase change element thereby reducin...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Arnold, John Christopher, Clevenger, Lawrence Alfred, Dalton, Timothy Joseph, Gaidis, Michael Christopher, Hsu, Louis L, Radens, Carl John, Wong, Keith Kwong Hon, Yang, Chih-Chao
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of the first electrode contacts the phase change element thereby reducing the contact area between the phase change element and the first electrode and thereby increasing the current density through the phase change element and effectively inducing the phase change at lower levels of current and reduced programming power.