Phase change memory element with a peripheral connection to a thin film electrode

Phase change memory element with a peripheral connection to a thin film electrode

A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of the first electrode contacts the phase change element thereby reducin...

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Hauptverfasser: Arnold, John Christopher, Clevenger, Lawrence Alfred, Dalton, Timothy Joseph, Gaidis, Michael Christopher, Hsu, Louis L, Radens, Carl John, Wong, Keith Kwong Hon, Yang, Chih-Chao
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Sprache:eng
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creator Arnold, John Christopher
Clevenger, Lawrence Alfred
Dalton, Timothy Joseph
Gaidis, Michael Christopher
Hsu, Louis L
Radens, Carl John
Wong, Keith Kwong Hon
Yang, Chih-Chao
description A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of the first electrode contacts the phase change element thereby reducing the contact area between the phase change element and the first electrode and thereby increasing the current density through the phase change element and effectively inducing the phase change at lower levels of current and reduced programming power.
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title Phase change memory element with a peripheral connection to a thin film electrode
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