Fuse link structures using film stress for programming and methods of manufacture

Fuse link structures using film stress for programming and methods of manufacture

A method of forming a programmable fuse structure includes forming at least one shallow trench isolation (STI) in a substrate, forming an e-fuse over the at least one STI and depositing an interlevel dielectric (ILD) layer over the e-fuse. Additionally, the method includes removing at least a portio...

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Bibliographische Detailangaben
Hauptverfasser: Barth, Karl W, Gambino, Jeffrey P, Lee, Tom C, Petrarca, Kevin S
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method of forming a programmable fuse structure includes forming at least one shallow trench isolation (STI) in a substrate, forming an e-fuse over the at least one STI and depositing an interlevel dielectric (ILD) layer over the e-fuse. Additionally, the method includes removing at least a portion of the at least one STI under the e-fuse to provide an air gap below a portion of the e-fuse and removing at least a portion of the ILD layer over the e-fuse to provide the air gap above the portion of the e-fuse.